SI4426DY-T1-E3
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Краткое описание:
N-CH MOSFET 20V 6.5A 25mR SOIC N
Дополнительная информация
N-channel MOSFET transistor, surface mount, in an 8-pin SOIC package. Features 20V drain-source breakdown voltage and 6.5A continuous drain current. Offers a maximum drain-source on-resistance of 25mR. Operates within a temperature range of -55°C to 150°C with 1.5W maximum power dissipation. Includes 40ns turn-on delay and 90ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 25mR |
| Drain to Source Breakdown Voltage | 20V |
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