SI4435DDY-T1-E3
Производится
Увеличить
Краткое описание:
P-CH MOSFET 30V 8.1A 24mR SOIC
Дополнительная информация
P-Channel MOSFET, 30V Drain-Source Voltage, 8.1A Continuous Drain Current, and 24mΩ Max Drain-Source On-Resistance. Features a 1.35nF Input Capacitance, 16ns Fall Time, 40ns Turn-Off Delay, and 42ns Turn-On Delay. This surface-mount component operates from -55°C to 150°C with a 2.5W Power Dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.35nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 42ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 24mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
