SI4435DYPBF
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Краткое описание:
P-Channel MOSFET, 30V, 8A, 20mΩ, SOIC-8
Дополнительная информация
P-channel MOSFET with 30V drain-source breakdown voltage and 8A continuous drain current. Features low 20mΩ drain-source on-resistance at a nominal Vgs of -1V. Operates with a maximum power dissipation of 2.5W and a gate-source voltage up to 20V. This surface-mount device is housed in an SO package with lead-free termination and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Polarity | P-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | -1V |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Package/Case | SO |
| Current Rating | -8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 95 |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | -30V |
| Turn-Off Delay Time | 130ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35mR |
| Drain to Source Breakdown Voltage | -30V |
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