SI4438DY-T1-E3

Снят с производства
SI4438DY-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 36A 2.7mR SO Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 30V drain-source voltage and 36A continuous drain current. Features low 2.7mΩ drain-source resistance and 7.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-SOIC surface-mount case, this component is RoHS compliant and supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 18ns
Packaging Tape and Reel
Rds On Max 2.7mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 4.645nF
Number of Channels 1
Turn-On Delay Time 36ns
Turn-Off Delay Time 47ns
Max Power Dissipation 7.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 36A
Drain to Source Voltage (Vdss) 30V

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