SI4446DY-T1-E3
Снят с производства
Увеличить
Краткое описание:
40V 3.9A N-CH MOSFET SOIC Surface Mount
Дополнительная информация
N-channel MOSFET with 40V drain-source breakdown voltage and 3.9A continuous drain current. Features low 40mΩ drain-source on-resistance and 1.1W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin SOIC surface-mount case, supplied on tape and reel. Includes fast switching characteristics with 7ns turn-on delay and 11ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Nominal Vgs | 1.6V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 700pF |
| Power Dissipation | 1.1W |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 40mR |
| Drain to Source Breakdown Voltage | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
