SI4447DY-T1-E3
Производится
Увеличить
Краткое описание:
P-CH MOSFET, -40V, 3.3A, 54mR Rds On, SOIC
Дополнительная информация
P-channel MOSFET, 40V drain-source voltage, 3.3A continuous drain current, and 54mΩ maximum drain-source on-resistance. Features a -2.2V threshold voltage and 16V gate-source voltage rating. This surface-mount component is housed in an 8-pin SOIC package with a maximum power dissipation of 1.1W. Operates across a -55°C to 150°C temperature range, with fast switching times including 8ns turn-on and 12ns fall times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 54mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 805pF |
| Power Dissipation | 1.1W |
| Threshold Voltage | -2.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 74ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 54mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 54mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
