SI4447DY-T1-GE3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
P-Channel Power MOSFET, 40V, 3.3A, 54mR, SOIC
Дополнительная информация
P-channel power MOSFET for general-purpose applications. Features a 40V drain-source voltage and 3.3A continuous drain current. Offers a low 54mΩ drain-to-source resistance at a 10V gate-source voltage. Packaged in a surface-mount SOIC with a 1.1W maximum power dissipation. Compliant with RoHS and halogen-free standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | P-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 72mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 805pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 74ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 54mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Voltage (Vdss) | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
