SI4456DY-T1-E3

Не рекомендуется для новых проектов
SI4456DY-T1-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: 40V 23A N-CH MOSFET SOIC Surface Mount 3.8mR RdsOn
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel MOSFET, 40V drain-source voltage, 23A continuous drain current, and 3.8mΩ maximum drain-source on-resistance. Features include 8ns fall time, 21ns turn-on delay, and 55ns turn-off delay. This surface-mount component operates within a -55°C to 150°C temperature range and offers 7.8W maximum power dissipation. Packaged in an 8-pin SOIC N for tape and reel distribution.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series TrenchFET®
Weight 0.006596oz
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.8mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 5.67nF
Number of Channels 1
Turn-On Delay Time 21ns
Turn-Off Delay Time 55ns
Max Power Dissipation 7.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 23A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 3.8mR

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.