SI4466DY-T1-E3
Снят с производства
Увеличить
Краткое описание:
N-Channel Power MOSFET, 20V, 9.5A, 9mR, SOP-8
Дополнительная информация
N-channel power MOSFET with 20V drain-source voltage and 9.5A continuous drain current. Features low 9mΩ drain-source on-resistance and 1.5W power dissipation. Designed for surface mounting in an SOP-8 package, this RoHS compliant component offers fast switching with a 20ns turn-on delay and 15ns fall time. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Nominal Vgs | 600mV |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.5W |
| Threshold Voltage | 600mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 150ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 9mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
