SI4482DY
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Краткое описание:
100V N-Ch MOSFET, 4.6A ID, 60mR RDS(on), SO-8
Дополнительная информация
N-Channel Power MOSFET, SO-8 package, featuring 100V drain-source breakdown voltage and 4.6A continuous drain current. Offers low on-state resistance of 60mΩ at nominal 2V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 25ns.
| RoHS | Not Compliant |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.002998oz |
| Current | 46A |
| Voltage | 100V |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Nominal Vgs | 2V |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 100 |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 100V |
| On-State Resistance | 80mR |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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