SI4487DY-T1-GE3
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Краткое описание:
MOSFET P-CH 30V 11.6A 8-SOIC
Дополнительная информация
MOSFET P-CH 30V 11.6A 8-SOIC
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20.5mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.075nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16.5mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Voltage (Vdss) | 30V |
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