SI4500BDY-T1-E3
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Краткое описание:
N/P-CH MOSFET 20V 3.8A 60mR SOIC
Дополнительная информация
Dual N-channel and P-channel MOSFET, 20V drain-source voltage, 6.6A continuous drain current, and 60mΩ drain-source on-resistance. Features a 1.3W maximum power dissipation, 12V gate-source voltage, and operates within a -55°C to 150°C temperature range. Surface mountable in an 8-pin SOIC package, this component offers fast switching with turn-on delay times of 20ns and fall times of 35ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Nominal Vgs | 600mV |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.3W |
| Threshold Voltage | 1.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 60mR |
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