SI4500BDY-T1-GE3
Снят с производства
Увеличить
Краткое описание:
N/P-CH MOSFET 20V 6.6A 48mR SOIC Surface Mount
Дополнительная информация
Dual N-channel and P-channel MOSFET with 20V drain-source voltage and 6.6A continuous drain current. Features low Rds(on) of 20mR, 1.5V threshold voltage, and fast switching times with turn-on delay of 20ns and fall time of 35ns. Packaged in an 8-SOIC surface-mount case, this RoHS-compliant component operates from -55°C to 150°C with a maximum power dissipation of 1.3W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 35ns |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 1.5V |
| Number of Channels | 2 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 48mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
