SI4511DY-T1-E3
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Краткое описание:
N/P-CH MOSFET 20V 4.6A 33mR SOIC
Дополнительная информация
Dual N-channel and P-channel MOSFET, 20V Drain-Source Voltage (Vdss), 4.6A Continuous Drain Current (ID), and 33mΩ Drain-to-Source Resistance. Features a 1.8V nominal Gate-Source Voltage (Vgs) and a maximum power dissipation of 1.1W. Packaged in an 8-SOIC surface-mount case with dimensions of 5mm length, 4mm width, and 1.55mm height. Operates across a temperature range of -55°C to 150°C, with turn-on delay time of 25ns and fall time of 30ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 30ns |
| Packaging | Tape and Reel |
| Rds On Max | 14.5mR |
| Nominal Vgs | 1.8V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 20V |
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