SI4532ADY-T1-E3
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Dual N/P Channel MOSFET, 30V, 4.9A, 53mR, SOIC
Дополнительная информация
Dual N/P-channel MOSFET, 30V Vdss, SOIC package. Features 4.9A continuous drain current and low on-resistance up to 53mR. Operates from -55°C to 150°C with a maximum power dissipation of 2W. Surface mountable with 8ns turn-on delay and 21ns turn-off delay. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 53mR |
| Nominal Vgs | 1V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 62mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 80mR |
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