SI4532DY
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Краткое описание:
N/P-CH MOSFET 30V 3.9A SOIC Surface Mount
Дополнительная информация
N-channel and P-channel MOSFET transistor, 30V drain-source breakdown voltage, 3.9A continuous drain current, and 65mΩ maximum drain-source on-resistance. Features a 3V threshold voltage, 235pF input capacitance, and 18ns turn-on/turn-off delay times. Packaged in an 8-pin SOIC surface-mount case, this component operates from -55°C to 150°C with a 2W maximum power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.2304g |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Nominal Vgs | 3V |
| Package/Case | SOIC |
| Current Rating | 3.9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Input Capacitance | 235pF |
| Power Dissipation | 2W |
| Threshold Voltage | 3V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65MR |
| Drain to Source Breakdown Voltage | 30V |
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