SI4539ADY-T1-E3
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Краткое описание:
30V N-Channel MOSFET, 3.7A, 36mR Rds On, SO Package
Дополнительная информация
Dual N-channel MOSFET featuring 30V drain-source voltage and 3.7A continuous drain current. Offers a maximum drain-source on-resistance of 36mΩ at a 10V gate-source voltage. Operates with a maximum power dissipation of 1.1W and a maximum operating temperature of 150°C. This surface-mount component is packaged in SO, with dimensions of 5mm length, 4mm width, and 1.55mm height.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 435pF |
| Power Dissipation | 1.1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 36mR |
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