SI4554DY-T1-GE3
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Краткое описание:
Dual N/P-Ch MOSFET, 40V, 8A, 21mR, SO, Surface Mount
Дополнительная информация
Dual N-channel and P-channel MOSFET, surface mountable in an SO package. Features 40V drain-source voltage, 8A continuous drain current, and a low 21mΩ drain-source resistance at 10V gate-source voltage. Offers 1V threshold voltage, 690pF input capacitance, and fast switching with 18ns fall time and 40ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 3.2W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 18ns |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 690pF |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 42ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 21mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 40V |
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