SI4559ADY-T1-E3
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Краткое описание:
N/P-CH MOSFET 60V 3.9A 100mR SOIC
Дополнительная информация
Dual N-channel and P-channel MOSFET, surface mount, 60V drain-source breakdown voltage, 3.9A continuous drain current, and 58mΩ on-state resistance. Features include 120mΩ max drain-source on-resistance, 20V gate-source voltage, and 150°C max operating temperature. This RoHS compliant component is packaged in an 8-SOIC case with tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL, N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 58mR |
| Termination | SMD/SMT |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 665pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 30ns |
| Dual Supply Voltage | 60V |
| On-State Resistance | 58mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 120mR |
| Drain to Source Breakdown Voltage | 60V |
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