SI4559EY
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Краткое описание:
60V 4.5A N/P-Channel MOSFET, 55mR, SO-8, 2-Element
Дополнительная информация
Dual N-Channel and P-Channel MOSFET, SO-8 package, featuring 60V drain-source voltage and 4.5A continuous drain current. Offers low 55mΩ on-state resistance and 2.4W power dissipation. Operates across a wide temperature range from -55°C to 175°C with fast switching times, including 8ns turn-on delay and 12ns turn-off delay. Designed for surface-mount applications.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.002998oz |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 35ns |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 100 |
| Power Dissipation | 2.4W |
| Number of Channels | 2 |
| Turn-On Delay Time | 8ns |
| On-State Resistance | 55mR |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 2.4W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 60V |
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