SI4562DY-T1-E3
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Краткое описание:
20V N/P-CH MOSFET 7.1A/6.2A 25mR SOIC 8-Pin
Дополнительная информация
Dual N-channel and P-channel MOSFET, 20V Vds, 7.1A continuous drain current, 25mR max Rds On. Features 27ns turn-on delay, 45ns fall time, and 95ns turn-off delay. Surface mount SOIC package with 2W power dissipation, operating from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | LITTLE FOOT® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Nominal Vgs | 600mV |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Threshold Voltage | 600mV |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 95ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 25mR |
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