SI4562DY-T1-GE3
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Краткое описание:
N/P-Channel MOSFET, 20V, 7.1A, 25mR, SO Package
Дополнительная информация
N and P-channel power MOSFET with 20V drain-source voltage and 7.1A continuous drain current. Features low 25mΩ drain-source resistance and 2W maximum power dissipation. This surface-mount device, packaged in SOP-8, offers fast switching with turn-on delay of 27ns and fall time of 45ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 45ns |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 2 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 95ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 20V |
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