SI4563DY-T1-GE3
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Краткое описание:
N/P-CH MOSFET 40V 8A 16mR SOIC Surface Mount
Дополнительная информация
N-channel and P-channel MOSFET with 40V drain-to-source voltage and 8A continuous drain current. Features low 16mΩ drain-to-source resistance and 2W maximum power dissipation. Operates across a -55°C to 150°C temperature range, with surface-mount SO package for efficient integration. Includes fast switching times with turn-on delay of 33ns and fall time of 69ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 69ns |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Nominal Vgs | 2V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.39nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 33ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 40V |
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