SI4620DY-T1-GE3
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Краткое описание:
N-CHANNEL MOSFET 30V 6A 35mR SOIC Surface Mount
Дополнительная информация
The SI4620DY-T1-GE3 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.1W and a continuous drain current of 6A. The device features a drain to source resistance of 35mR and a gate to source voltage of 20V. It is packaged in a SOIC package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | LITTLE FOOT® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.04nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
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