SI4622DY-T1-E3
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Краткое описание:
2 N-CH MOSFET 30V 8A 16mR SOIC
Дополнительная информация
Dual N-channel MOSFET featuring 30V drain-source voltage and 8A continuous drain current. Offers low on-resistance of 26.4mΩ at 10V, with a maximum of 16mΩ. Designed for surface mounting in an 8-SOIC package, this component boasts fast switching speeds with a 14ns turn-on delay and 11ns fall time. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 3.1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SkyFET®, TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.458nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26.4mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
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