SI4634DY-T1-E3
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Краткое описание:
N-Channel MOSFET, 30V, 16.3A, 5.2mR Rds On, SOIC
Дополнительная информация
N-Channel Power MOSFET, 30V Vdss, 16.3A Continuous Drain Current (ID), and 5.2mR Drain-Source On-Resistance (Rds On Max). This surface-mount device features a 5.7W Max Power Dissipation and operates across a temperature range of -55°C to 150°C. With a 1.5mm height, 5mm length, and 4mm width, it offers fast switching characteristics with an 8ns fall time, 14ns turn-on delay, and 33ns turn-off delay. The component includes 3.15nF input capacitance and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 3.15nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Max Power Dissipation | 5.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.2mR |
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