SI4634DY-T1-GE3
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Краткое описание:
N-Channel MOSFET, 30V, 24.5A, 5.2mR, SO, Surface Mount
Дополнительная информация
N-Channel MOSFET, 30V Vdss, 24.5A continuous drain current, and 5.2mΩ Rds On. This silicon, metal-oxide semiconductor FET features a 2.6V threshold voltage, 3.15nF input capacitance, and fast switching times with 14ns turn-on and 33ns turn-off delays. Designed for surface mounting in an SO package, it offers a maximum power dissipation of 2.5W and operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.2mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.15nF |
| Threshold Voltage | 2.6V |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24.5A |
| Drain to Source Voltage (Vdss) | 30V |
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