SI4642DY-T1-E3
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Краткое описание:
30V 34A N-CH MOSFET SOIC 3.75mR RdsOn
Дополнительная информация
N-channel MOSFET, 30V Vdss, 34A continuous drain current, and 3.75mR Rds On. Features a 3V threshold voltage and 20V gate-to-source voltage rating. Operates from -55°C to 150°C with a maximum power dissipation of 7.8W. Packaged in an 8-SOIC surface mount case, this component offers fast switching with turn-on delay of 76ns and fall time of 50ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.75mR |
| Nominal Vgs | 3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 5.54nF |
| Power Dissipation | 3.5W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 76ns |
| Turn-Off Delay Time | 53ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Voltage (Vdss) | 30V |
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