SI4646DY-T1-E3
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Краткое описание:
30V 12A N-CH MOSFET 11.5mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 12A continuous drain current. Features low 11.5mΩ drain-source resistance and 6.25W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin SOIC surface-mount case, ideal for high-density applications. Includes fast switching characteristics with turn-on delay of 23ns and fall time of 12ns.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SkyFET®, TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Rds On Max | 11.5mR |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 2500 |
| Input Capacitance | 1.79nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 23ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Max Power Dissipation | 6.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
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