SI4650DY-T1-E3
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Краткое описание:
30V 7.8A N-CH MOSFET SOIC 18mR RdsOn
Дополнительная информация
Surface mountable, N-channel MOSFET with 30V drain-source voltage and 7.8A continuous drain current. Features low 18mΩ drain-to-source resistance and fast switching times, including a 32ns turn-on delay and 19ns turn-off delay. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 3.1W. Packaged in an 8-SOIC case, this RoHS compliant component offers two N-channel FETs.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 34ns |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.55nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 32ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Voltage (Vdss) | 30V |
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