SI4668DY-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 16A 25V SOIC Surface Mount
Дополнительная информация
The SI4668DY-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 16.2A and a drain to source breakdown voltage of 25V. The device has a maximum power dissipation of 5W and a power dissipation of 2.5W. It is packaged in a SOIC package and is available in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Packaging | Tape and Reel |
| Rds On Max | 10.5mR |
| Package/Case | SOIC |
| Package Quantity | 1 |
| Input Capacitance | 1.654nF |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 73ns |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10.5mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 16.2A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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