SI4670DY-T1-GE3
Снят с производства
Увеличить
Краткое описание:
25V 7A 23mR 2-CH N-CH MOSFET SOIC
Дополнительная информация
Dual N-channel MOSFET featuring 25V drain-source voltage and 7A continuous drain current. Surface mountable in an 8-SOIC package, this component offers a low 23mΩ drain-to-source resistance. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.8W. Key switching characteristics include a 15ns turn-on delay, 20ns turn-off delay, and 50ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 680pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 25V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
