SI4688DY-T1-E3
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Краткое описание:
N-CH MOSFET 30V 8.9A 11mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET, 30V Vdss, 8.9A continuous drain current, and 11mΩ Rds On. Features a 1.58nF input capacitance and 1.4W max power dissipation. Packaged in an 8-SOIC surface mount case with dimensions of 5mm length, 4mm width, and 1.55mm height. Operates between -55°C and 150°C, with turn-on delay of 13ns and turn-off delay of 33ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.58nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Turn-Off Delay Time | 33ns |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Voltage (Vdss) | 30V |
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