SI4804BDY-T1-E3
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Краткое описание:
30V 5.7A N-Channel MOSFET SOIC
Дополнительная информация
N-Channel MOSFET featuring 30V drain-source voltage and 5.7A continuous drain current. Offers a low 22mΩ drain-source on-resistance and 1.1W maximum power dissipation. This surface-mount SOIC package component operates across a wide temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 9ns and fall time of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Nominal Vgs | 3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22mR |
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