SI4804CDY-T1-GE3
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Краткое описание:
N-CH MOSFET 30V 7.1A 22mR SOIC N
Дополнительная информация
N-Channel MOSFET, 30V Vdss, 7.1A continuous drain current, and 22mR drain-source on-resistance. Features include a 2.4V nominal Vgs, 865pF input capacitance, and 9ns fall time. This surface-mount component operates from -55°C to 150°C with a maximum power dissipation of 3.1W. Packaged in an 8-pin SOIC N for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Nominal Vgs | 2.4V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 865pF |
| Power Dissipation | 2W |
| Threshold Voltage | 2.4V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22mR |
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