SI4808DY-T1-E3

Снят с производства
SI4808DY-T1-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: 2 N-CH MOSFET 30V 5.7A 22mR SO Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Dual N-channel MOSFET, 30V Vdss, 5.7A continuous drain current, and 22mΩ Rds On. Features 8ns turn-on delay, 21ns turn-off delay, and 10ns fall time. Packaged in an 8-pin SOIC for surface mounting, with a maximum power dissipation of 2W. Operating temperature range from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series LITTLE FOOT®
Weight 0.01787oz
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 22mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Power Dissipation 2W
Number of Channels 2
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 21ns
Max Power Dissipation 1.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 22mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5.7A
Drain to Source Voltage (Vdss) 30V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.