SI4812BDY-T1-E3
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Краткое описание:
30V 7.3A N-CH MOSFET 16mR SOIC
Дополнительная информация
N-channel MOSFET, 30V drain-source voltage, 7.3A continuous drain current, and 16mΩ maximum drain-source on-resistance. Features a 3V threshold voltage and 1.4W maximum power dissipation. This surface-mount component is housed in an 8-SOIC package with dimensions of 5mm length, 4mm width, and 1.55mm height. Operates within a temperature range of -55°C to 150°C, with fast switching characteristics including 15ns turn-on delay and 13ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | LITTLE FOOT® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Nominal Vgs | 3V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 16mR |
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