SI4814BDY-T1-E3

Снят с производства
SI4814BDY-T1-E3 - Vishay(Siliconix)
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Краткое описание: 30V 10.5A 18mR 2-Ch N-Ch MOSFET, SOP-8, Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Surface mount N-channel power MOSFET featuring 30V drain-source voltage and 10.5A continuous drain current. This dual-channel device offers a low 18mΩ drain-to-source resistance (Rds On Max) and is packaged in an 8-pin SOP for efficient thermal management with a maximum power dissipation of 3.5W. Ideal for general-purpose power applications, it boasts fast switching speeds with turn-on delay of 9ns and fall time of 13ns. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series LITTLE FOOT®
Weight 0.006596oz
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 13ns
Packaging Tape and Reel
Rds On Max 18mR
Package/Case SO
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 2500
Number of Channels 2
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 27ns
Max Power Dissipation 3.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10.5A
Drain to Source Voltage (Vdss) 30V

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