SI4823DY-T1-GE3

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SI4823DY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CHANNEL MOSFET 20V 3.3A 108mR SO Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SI4823DY-T1-GE3 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.3A and a drain to source resistance of 108mR. The device is packaged in a surface mount SO package and is RoHS compliant. It is rated for a maximum power dissipation of 2.8W and has a maximum drain to source voltage of 20V.
RoHS Compliant
Mount Surface Mount
Series LITTLE FOOT®
Weight 0.006596oz
Polarity P-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 108mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 660pF
Number of Channels 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 18ns
Max Power Dissipation 2.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 108mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.3A
Drain to Source Voltage (Vdss) 20V

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