SI4825DY-T1-E3
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Краткое описание:
P-CH MOSFET, -30V, 8.1A, 14mR, SOIC
Дополнительная информация
P-channel MOSFET with -30V drain-source voltage and 8.1A continuous drain current. Features low 14mΩ drain-source on-resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-SOIC surface-mount case, this component offers fast switching with turn-on delay of 15ns and fall time of 13ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | P-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Nominal Vgs | -3V |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 97ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 14mR |
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