SI4830CDY-T1-E3

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SI4830CDY-T1-E3 - Vishay(Siliconix)
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Краткое описание: 30V 8A N-Channel MOSFET, 20mR Rds On, 2.9W, SO Package
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Surface mount N-channel MOSFET with 30V drain-source voltage and 8A continuous drain current. Features 20mΩ drain-source resistance at 10V gate-source voltage, 2.9W maximum power dissipation, and a low on-resistance. This component offers fast switching characteristics with turn-on delay of 17ns and fall time of 12ns. Operating temperature range spans from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series LITTLE FOOT®
Weight 0.01787oz
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 12ns
Packaging Tape and Reel
Rds On Max 20mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 950pF
Number of Channels 2
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 18ns
Max Power Dissipation 2.9W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 20mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 30V

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