SI4833ADY-T1-E3

Снят с производства
SI4833ADY-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 30V 3.85A 72mR SO Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET, 30V drain-source voltage, 3.85A continuous drain current, and 72mΩ drain-to-source resistance. Features a 750pF input capacitance, 11ns fall time, 19ns turn-off delay, and 7ns turn-on delay. This surface-mount device operates from -55°C to 150°C with a maximum power dissipation of 2.75W. Packaged in an 8-SOIC case with dimensions of 5mm length, 4mm width, and 1.55mm height.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.55mm
Length 5mm
Series LITTLE FOOT®
Weight 0.006596oz
Polarity P-CHANNEL
Fall Time 11ns
Packaging Tape and Reel
Rds On Max 72mR
Package/Case SO
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 750pF
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 7ns
Turn-Off Delay Time 19ns
Max Power Dissipation 2.75W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 72mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.85A
Drain to Source Voltage (Vdss) 30V

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