SI4834BDY-T1-GE3
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Краткое описание:
2 N-CH MOSFET 30V 5.7A 22mR SOIC
Дополнительная информация
2 N-Channel MOSFET, 30V Vdss, 5.7A continuous drain current, and 22mR Rds On. This surface mount component features a 2 N-Channel FET type, operating from -55°C to 150°C, with a maximum power dissipation of 1.1W. It is packaged in an 8-SOIC case, measuring 5mm in length, 4mm in width, and 1.55mm in height, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Number of Channels | 2 |
| Turn-On Delay Time | 9ns |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Voltage (Vdss) | 30V |
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