SI4850EY-T1
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Краткое описание:
60V 6A N-CH MOSFET SO 22mR RdsOn
Дополнительная информация
N-channel MOSFET, 60V Vdss, 6A continuous drain current, and 22mΩ Rds On. Features 10ns turn-on and fall times, 25ns turn-off delay, and a maximum power dissipation of 1.7W. Operates within a temperature range of -55°C to 175°C. Packaged in an 8-SOIC surface-mount case, this component is supplied on tape and reel.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | SO |
| RoHS Compliant | No |
| DC Rated Voltage | 60V |
| Package Quantity | 2500 |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 60V |
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