SI4890BDY-T1-GE3
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Краткое описание:
N-Channel Power MOSFET, 30V, 10.7A, 12mR, SOP-8
Дополнительная информация
N-channel power MOSFET with 30V drain-source voltage (Vdss) and 10.7A continuous drain current (ID). Features ultra-low 12mΩ drain-source on-resistance (Rds On Max) and 5.7W maximum power dissipation. This surface-mount component, housed in an SOP-8 package, offers fast switching with typical turn-on and turn-off delay times of 20ns and fall time of 8ns. It operates across a wide temperature range from -55°C to 150°C and is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 12mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.535nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 5.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12MR |
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