SI4892DY-T1-E3
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Краткое описание:
N-CH MOSFET 30V 8.8A 12mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET featuring 30V drain-source breakdown voltage and 8.8A continuous drain current. Offers a low 12mΩ maximum drain-source on-resistance. Designed for surface mounting in an 8-SOIC package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 11ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.157inch |
| Height | 0.061inch |
| Length | 0.196inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 12mR |
| Package/Case | SO |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.6W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12mR |
| Drain to Source Breakdown Voltage | 30V |
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