SI4908DY-T1-E3
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N-Ch MOSFET, 40V, 5A, 60mR, SOIC, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, featuring a 40V Drain to Source Voltage (Vdss) and 5A Continuous Drain Current (ID). This surface-mount device offers a low Drain to Source Resistance (Rds On Max) of 60mR. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.85W. The SOIC package facilitates integration into electronic circuits.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 355pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 74ns |
| Turn-Off Delay Time | 31ns |
| Max Power Dissipation | 1.85W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 40V |
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