SI4908DY-T1-GE3
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Краткое описание:
2 N-CH MOSFET 40V 5A 60mR SO Surface Mount
Дополнительная информация
Dual N-channel MOSFET, 40V Drain-Source Voltage (Vdss), 5A Continuous Drain Current (ID). Features 60mΩ Drain-Source On-Resistance (Rds On Max) and 2.2V Threshold Voltage (Vgs(th)). Operates with a 16V Gate-Source Voltage (Vgs) and offers fast switching with 74ns Turn-On Delay and 31ns Turn-Off Delay. Housed in an 8-SOIC surface-mount package with a maximum power dissipation of 1.85W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | TrenchFET® |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 33ns |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 355pF |
| Threshold Voltage | 2.2V |
| Number of Channels | 2 |
| Turn-On Delay Time | 74ns |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.85W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 40V |
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