SI4913DY-T1-E3
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Краткое описание:
P-CH MOSFET 20V 7.1A 15mR SOIC
Дополнительная информация
P-channel MOSFET featuring 20V drain-source breakdown voltage and 7.1A continuous drain current. Surface mountable in an 8-SOIC package, this component offers a low 15mΩ maximum drain-source on-resistance. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 1.1W. Includes fast switching characteristics with a 32ns turn-on delay and 42ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 42ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Number of Elements | 2 |
| Turn-On Delay Time | 32ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 350ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 15mR |
| Drain to Source Breakdown Voltage | 20V |
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