SI4914DY-T1-E3
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Краткое описание:
30V 5.7A N-CH MOSFET SOIC 20mR RdsOn
Дополнительная информация
Dual N-channel MOSFET, 30V drain-source voltage, 5.7A continuous drain current, and 20mΩ drain-to-source resistance. Features include 7ns turn-on delay, 13ns fall time, and 35ns turn-off delay. Packaged in an 8-SOIC surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1.16W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.006596oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Number of Channels | 2 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 1.16W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Voltage (Vdss) | 30V |
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